| Manufacturer | |
| Mfr. Part # | UF3C065030B3 |
| EBEE Part # | E86581984 |
| Package | TO-263(D2PAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263(D2PAK) Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $37.5401 | $ 37.5401 |
| 200+ | $14.9789 | $ 2995.7800 |
| 500+ | $14.4787 | $ 7239.3500 |
| 800+ | $14.2323 | $ 11385.8400 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Qorvo UF3C065030B3 | |
| RoHS | ||
| Power Dissipation | 242W | |
| Continuous Drain Current | 65A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 650V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $37.5401 | $ 37.5401 |
| 200+ | $14.9789 | $ 2995.7800 |
| 500+ | $14.4787 | $ 7239.3500 |
| 800+ | $14.2323 | $ 11385.8400 |
