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PN Junction Semiconductor P3M173K0T3
| Manufacturer | |
| Mfr. Part # | P3M173K0T3 |
| EBEE Part # | E85823481 |
| Package | TO-220-2L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-220-2L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.8233 | $ 10.8233 |
| 200+ | $4.3200 | $ 864.0000 |
| 500+ | $4.1753 | $ 2087.6500 |
| 1000+ | $4.1039 | $ 4103.9000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | PN Junction Semiconductor P3M173K0T3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Power Dissipation | 75W | |
| Total Gate Charge | 3.79nC | |
| Continuous Drain Current | 4A | |
| Reverse Transfer Capacitance | 4.3pF | |
| Input Capacitance | 116pF | |
| Output Capacitance | 12pF | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | 2500mΩ | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | - | |
| Encapsulated Type | Single Tube | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1700V | |
| Drain Source Threshold Voltage | 2.2V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.8233 | $ 10.8233 |
| 200+ | $4.3200 | $ 864.0000 |
| 500+ | $4.1753 | $ 2087.6500 |
| 1000+ | $4.1039 | $ 4103.9000 |
