| Manufacturer | |
| Mfr. Part # | P3M06300D5 |
| EBEE Part # | E85823477 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.3688 | $ 11.3688 |
| 200+ | $4.5361 | $ 907.2200 |
| 500+ | $4.3844 | $ 2192.2000 |
| 1000+ | $4.3095 | $ 4309.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | PN Junction Semiconductor P3M06300D5 | |
| RoHS | ||
| Power Dissipation | 26W | |
| Continuous Drain Current | 9A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 650V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.3688 | $ 11.3688 |
| 200+ | $4.5361 | $ 907.2200 |
| 500+ | $4.3844 | $ 2192.2000 |
| 1000+ | $4.3095 | $ 4309.5000 |
