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onsemi NVH4L070N120M3S


Manufacturer
Mfr. Part #
NVH4L070N120M3S
EBEE Part #
E820625010
Package
TO-247-4L
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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10 In Stock for Fast Shipping
10 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$14.0564$ 14.0564
10+$13.3820$ 133.8200
30+$12.2121$ 366.3630
90+$11.1926$ 1007.3340
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
Datasheetonsemi NVH4L070N120M3S
RoHS
TypeN-Channel
Configuration-
RDS(on)35mΩ@18V
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)5pF
Pd - Power Dissipation160W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))-
Current - Continuous Drain(Id)34A
Ciss-Input Capacitance1.23nF
Gate Charge(Qg)57nC

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