| Manufacturer | |
| Mfr. Part # | NVH4L070N120M3S |
| EBEE Part # | E820625010 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.0564 | $ 14.0564 |
| 10+ | $13.3820 | $ 133.8200 |
| 30+ | $12.2121 | $ 366.3630 |
| 90+ | $11.1926 | $ 1007.3340 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NVH4L070N120M3S | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 35mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Pd - Power Dissipation | 160W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 34A | |
| Ciss-Input Capacitance | 1.23nF | |
| Gate Charge(Qg) | 57nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.0564 | $ 14.0564 |
| 10+ | $13.3820 | $ 133.8200 |
| 30+ | $12.2121 | $ 366.3630 |
| 90+ | $11.1926 | $ 1007.3340 |
