| Manufacturer | |
| Mfr. Part # | NVH4L040N120M3S |
| EBEE Part # | E819673852 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.9618 | $ 13.9618 |
| 10+ | $13.7514 | $ 137.5140 |
| 30+ | $13.3882 | $ 401.6460 |
| 90+ | $13.0718 | $ 1176.4620 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NVH4L040N120M3S | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 54mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Pd - Power Dissipation | 231W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V | |
| Current - Continuous Drain(Id) | 54A | |
| Ciss-Input Capacitance | 1.7nF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 75nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.9618 | $ 13.9618 |
| 10+ | $13.7514 | $ 137.5140 |
| 30+ | $13.3882 | $ 401.6460 |
| 90+ | $13.0718 | $ 1176.4620 |
