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onsemi NTH4L070N120M3S


Manufacturer
Mfr. Part #
NTH4L070N120M3S
EBEE Part #
E819673850
Package
TO-247-4L
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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435 In Stock for Fast Shipping
435 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$5.9475$ 5.9475
10+$5.3077$ 53.0770
30+$4.9282$ 147.8460
90+$4.5424$ 408.8160
450+$4.3662$ 1964.7900
900+$4.2852$ 3856.6800
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
Datasheetonsemi NTH4L070N120M3S
RoHS
TypeN-Channel
Configuration-
RDS(on)65mΩ@18V
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)5pF
Pd - Power Dissipation80W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))2.9V
Current - Continuous Drain(Id)34A
Ciss-Input Capacitance1.23nF
Output Capacitance(Coss)57pF
Gate Charge(Qg)57nC

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