| Manufacturer | |
| Mfr. Part # | NTH4L040N120M3S |
| EBEE Part # | E819673849 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $8.0766 | $ 8.0766 |
| 10+ | $6.9367 | $ 69.3670 |
| 30+ | $6.2429 | $ 187.2870 |
| 90+ | $5.6602 | $ 509.4180 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NTH4L040N120M3S | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 54mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Pd - Power Dissipation | 231W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V | |
| Current - Continuous Drain(Id) | 54A | |
| Ciss-Input Capacitance | 1.7nF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 75nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $8.0766 | $ 8.0766 |
| 10+ | $6.9367 | $ 69.3670 |
| 30+ | $6.2429 | $ 187.2870 |
| 90+ | $5.6602 | $ 509.4180 |
