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onsemi NTH4L040N120M3S


Manufacturer
Mfr. Part #
NTH4L040N120M3S
EBEE Part #
E819673849
Package
TO-247-4
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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20 In Stock for Fast Shipping
20 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$8.0766$ 8.0766
10+$6.9367$ 69.3670
30+$6.2429$ 187.2870
90+$5.6602$ 509.4180
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
Datasheetonsemi NTH4L040N120M3S
RoHS
TypeN-Channel
RDS(on)54mΩ
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)7pF
Pd - Power Dissipation231W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))4.4V
Current - Continuous Drain(Id)54A
Ciss-Input Capacitance1.7nF
Output Capacitance(Coss)80pF
Gate Charge(Qg)75nC

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