| Manufacturer | |
| Mfr. Part # | NTH4L025N065SC1 |
| EBEE Part # | E85209034 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.8898 | $ 14.8898 |
| 10+ | $14.6669 | $ 146.6690 |
| 30+ | $14.2796 | $ 428.3880 |
| 90+ | $13.9414 | $ 1254.7260 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NTH4L025N065SC1 | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 19mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Pd - Power Dissipation | 174W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 99A | |
| Ciss-Input Capacitance | 3.48nF | |
| Gate Charge(Qg) | 164nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.8898 | $ 14.8898 |
| 10+ | $14.6669 | $ 146.6690 |
| 30+ | $14.2796 | $ 428.3880 |
| 90+ | $13.9414 | $ 1254.7260 |
