| Manufacturer | |
| Mfr. Part # | NTH4L022N120M3S |
| EBEE Part # | E83281105 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.7378 | $ 18.7378 |
| 10+ | $16.7152 | $ 167.1520 |
| 30+ | $15.2975 | $ 458.9250 |
| 90+ | $14.0614 | $ 1265.5260 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NTH4L022N120M3S | |
| RoHS | ||
| Type | N-Channel | |
| Pd - Power Dissipation | 352W | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 68A |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.7378 | $ 18.7378 |
| 10+ | $16.7152 | $ 167.1520 |
| 30+ | $15.2975 | $ 458.9250 |
| 90+ | $14.0614 | $ 1265.5260 |
