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onsemi NTH4L022N120M3S


Manufacturer
Mfr. Part #
NTH4L022N120M3S
EBEE Part #
E83281105
Package
TO-247-4L
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$18.7378$ 18.7378
10+$16.7152$ 167.1520
30+$15.2975$ 458.9250
90+$14.0614$ 1265.5260
TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
Datasheetonsemi NTH4L022N120M3S
RoHS
TypeN-Channel
Pd - Power Dissipation352W
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)68A

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