| Manufacturer | |
| Mfr. Part # | NTBL045N065SC1 |
| EBEE Part # | E85208253 |
| Package | H-PSOF8L(9.9x11.68) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | H-PSOF8L(9.9x11.68) Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.1101 | $ 13.1101 |
| 10+ | $10.3063 | $ 103.0630 |
| 30+ | $9.3200 | $ 279.6000 |
| 100+ | $8.4920 | $ 849.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | onsemi NTBL045N065SC1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 50mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| Pd - Power Dissipation | 348W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Current - Continuous Drain(Id) | 73A | |
| Ciss-Input Capacitance | 1.87nF | |
| Output Capacitance(Coss) | 162pF | |
| Gate Charge(Qg) | 105nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.1101 | $ 13.1101 |
| 10+ | $10.3063 | $ 103.0630 |
| 30+ | $9.3200 | $ 279.6000 |
| 100+ | $8.4920 | $ 849.2000 |
