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onsemi NTBG022N120M3S


Manufacturer
Mfr. Part #
NTBG022N120M3S
EBEE Part #
E85209031
Package
D2PAK7(TO-263-7L-HV)
Customer #
Datasheet
EDA Models
ECCN
ECL99
Description
D2PAK7(TO-263-7L-HV) Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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5 In Stock for Fast Shipping
5 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$14.8157$ 14.8157
10+$12.6568$ 126.5680
30+$10.9999$ 329.9970
100+$9.5531$ 955.3100
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
Datasheetonsemi NTBG022N120M3S
RoHS
TypeN-Channel
RDS(on)30mΩ
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)14pF
Pd - Power Dissipation234W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))4.4V
Current - Continuous Drain(Id)58A
Ciss-Input Capacitance3.2nF
Output Capacitance(Coss)148pF
Gate Charge(Qg)148nC

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