| Manufacturer | |
| Mfr. Part # | MSCSM120DDUM31TBL2NG |
| EBEE Part # | E817439276 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $750.3882 | $ 750.3882 |
| 200+ | $299.4106 | $ 59882.1200 |
| 500+ | $289.4052 | $ 144702.6000 |
| 1000+ | $284.4617 | $ 284461.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Microchip Tech MSCSM120DDUM31TBL2NG | |
| RoHS | ||
| Power Dissipation | 310W | |
| Continuous Drain Current | 79A | |
| Configuration | Common Source | |
| Channel Type | 4 N-channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $750.3882 | $ 750.3882 |
| 200+ | $299.4106 | $ 59882.1200 |
| 500+ | $289.4052 | $ 144702.6000 |
| 1000+ | $284.4617 | $ 284461.7000 |
