| Manufacturer | |
| Mfr. Part # | MSC080SMA120B |
| EBEE Part # | E85127757 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $27.4642 | $ 27.4642 |
| 10+ | $25.8708 | $ 258.7080 |
| 30+ | $24.2869 | $ 728.6070 |
| 90+ | $22.9050 | $ 2061.4500 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Microchip Tech MSC080SMA120B | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 100mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF | |
| Pd - Power Dissipation | 231W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.1nF | |
| Output Capacitance(Coss) | 91pF | |
| Gate Charge(Qg) | 72nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $27.4642 | $ 27.4642 |
| 10+ | $25.8708 | $ 258.7080 |
| 30+ | $24.2869 | $ 728.6070 |
| 90+ | $22.9050 | $ 2061.4500 |
