| Manufacturer | |
| Mfr. Part # | MDDG2C170R045K3 |
| EBEE Part # | E822370507 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $81.6860 | $ 81.6860 |
| 200+ | $32.5939 | $ 6518.7800 |
| 450+ | $31.5051 | $ 14177.2950 |
| 900+ | $30.9659 | $ 27869.3100 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | MDD(Microdiode Semiconductor) MDDG2C170R045K3 | |
| RoHS | ||
| Operating Temperature | - | |
| Power Dissipation | - | |
| Total Gate Charge | - | |
| Continuous Drain Current | 72A | |
| Reverse Transfer Capacitance | - | |
| Input Capacitance | - | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | - | |
| Encapsulated Type | - | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1700V | |
| Drain Source Threshold Voltage | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $81.6860 | $ 81.6860 |
| 200+ | $32.5939 | $ 6518.7800 |
| 450+ | $31.5051 | $ 14177.2950 |
| 900+ | $30.9659 | $ 27869.3100 |
