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MDD(Microdiode Semiconductor) MDDG2C120R016K3
| Manufacturer | |
| Mfr. Part # | MDDG2C120R016K3 |
| EBEE Part # | E822370506 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $111.6382 | $ 111.6382 |
| 200+ | $44.5454 | $ 8909.0800 |
| 450+ | $43.0572 | $ 19375.7400 |
| 900+ | $42.3208 | $ 38088.7200 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | MDD(Microdiode Semiconductor) MDDG2C120R016K3 | |
| RoHS | ||
| Operating Temperature | - | |
| Power Dissipation | - | |
| Total Gate Charge | - | |
| Continuous Drain Current | 115A | |
| Reverse Transfer Capacitance | - | |
| Input Capacitance | - | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | - | |
| Encapsulated Type | - | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1200V | |
| Drain Source Threshold Voltage | - |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $111.6382 | $ 111.6382 |
| 200+ | $44.5454 | $ 8909.0800 |
| 450+ | $43.0572 | $ 19375.7400 |
| 900+ | $42.3208 | $ 38088.7200 |
