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LGE LGE3M35120Q
| Manufacturer | |
| Mfr. Part # | LGE3M35120Q |
| EBEE Part # | E827035429 |
| Package | TO-247-4 |
| Customer # | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $28.8066 | $ 28.8066 |
| 200+ | $11.4940 | $ 2298.8000 |
| 500+ | $11.1103 | $ 5555.1500 |
| 1000+ | $10.9202 | $ 10920.2000 |
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2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| RoHS |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $28.8066 | $ 28.8066 |
| 200+ | $11.4940 | $ 2298.8000 |
| 500+ | $11.1103 | $ 5555.1500 |
| 1000+ | $10.9202 | $ 10920.2000 |
