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KNSCHA KN3M80120K


Manufacturer
Mfr. Part #
KN3M80120K
EBEE Part #
E85373190
Package
TO-247-4
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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8 In Stock for Fast Shipping
8 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$6.0152$ 6.0152
10+$5.2035$ 52.0350
30+$4.7102$ 141.3060
120+$4.2953$ 515.4360
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetKNSCHA KN3M80120K
RoHS
TypeN-Channel
RDS(on)85mΩ
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)3.9pF
Pd - Power Dissipation214W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))3.6V
Current - Continuous Drain(Id)38A
Ciss-Input Capacitance920pF
Output Capacitance(Coss)57pF
Gate Charge(Qg)40nC

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