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KNSCHA KN3M65017D


Manufacturer
Mfr. Part #
KN3M65017D
EBEE Part #
E87432998
Package
TO-247-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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27 In Stock for Fast Shipping
27 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$3.0023$ 3.0023
10+$2.5573$ 25.5730
30+$2.2782$ 68.3460
120+$1.9930$ 239.1600
480+$1.8648$ 895.1040
1020+$1.8090$ 1845.1800
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetKNSCHA KN3M65017D
RoHS
TypeN-Channel
Configuration-
RDS(on)650mΩ@20V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)1.8pF
Pd - Power Dissipation62W
Drain to Source Voltage1.7kV
Gate Threshold Voltage (Vgs(th))2.6V
Current - Continuous Drain(Id)7A
Ciss-Input Capacitance194pF
Gate Charge(Qg)23nC

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