5% off
| Manufacturer | |
| Mfr. Part # | KN3M65017D |
| EBEE Part # | E87432998 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0023 | $ 3.0023 |
| 10+ | $2.5573 | $ 25.5730 |
| 30+ | $2.2782 | $ 68.3460 |
| 120+ | $1.9930 | $ 239.1600 |
| 480+ | $1.8648 | $ 895.1040 |
| 1020+ | $1.8090 | $ 1845.1800 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | KNSCHA KN3M65017D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 650mΩ@20V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| Pd - Power Dissipation | 62W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 194pF | |
| Gate Charge(Qg) | 23nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0023 | $ 3.0023 |
| 10+ | $2.5573 | $ 25.5730 |
| 30+ | $2.2782 | $ 68.3460 |
| 120+ | $1.9930 | $ 239.1600 |
| 480+ | $1.8648 | $ 895.1040 |
| 1020+ | $1.8090 | $ 1845.1800 |
