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InventChip IV1Q12750T3
| Manufacturer | |
| Mfr. Part # | IV1Q12750T3 |
| EBEE Part # | E82979251 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>140 In Stock for Fast Shipping
140 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.7234 | $ 5.7234 |
| 10+ | $5.0281 | $ 50.2810 |
| 30+ | $4.2263 | $ 126.7890 |
| 90+ | $3.8072 | $ 342.6480 |
| 450+ | $3.6140 | $ 1626.3000 |
| 900+ | $3.5273 | $ 3174.5700 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12750T3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Power Dissipation | 78.4W | |
| Total Gate Charge | 15.8nC | |
| Continuous Drain Current | 6.8A | |
| Reverse Transfer Capacitance | 2.6pF | |
| Input Capacitance | 260pF | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | 750mΩ | |
| Encapsulated Type | Single Tube | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1200V | |
| Drain Source Threshold Voltage | 4.3V |
Shopping Guide
Expand
140 Stock for Shipping Fast
140 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.7234 | $ 5.7234 |
| 10+ | $5.0281 | $ 50.2810 |
| 30+ | $4.2263 | $ 126.7890 |
| 90+ | $3.8072 | $ 342.6480 |
| 450+ | $3.6140 | $ 1626.3000 |
| 900+ | $3.5273 | $ 3174.5700 |
Best price for more quantity?
$
