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InventChip IV1Q12750O3
| Manufacturer | |
| Mfr. Part # | IV1Q12750O3 |
| EBEE Part # | E82979250 |
| Package | TO-220-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-220-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2578 | $ 5.2578 |
| 10+ | $4.5699 | $ 45.6990 |
| 50+ | $4.1625 | $ 208.1250 |
| 100+ | $3.7491 | $ 374.9100 |
| 500+ | $3.5575 | $ 1778.7500 |
| 1000+ | $3.4715 | $ 3471.5000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12750O3 | |
| RoHS | ||
| Type | N-Channel | |
| Pd - Power Dissipation | 66.9W | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 6.4A |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2578 | $ 5.2578 |
| 10+ | $4.5699 | $ 45.6990 |
| 50+ | $4.1625 | $ 208.1250 |
| 100+ | $3.7491 | $ 374.9100 |
| 500+ | $3.5575 | $ 1778.7500 |
| 1000+ | $3.4715 | $ 3471.5000 |
