Recommonended For You
Images are for reference only
Add to Favourites
InventChip IV1Q12160T4
| Manufacturer | |
| Mfr. Part # | IV1Q12160T4 |
| EBEE Part # | E82894810 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.5422 | $ 10.5422 |
| 10+ | $9.1533 | $ 91.5330 |
| 30+ | $7.9908 | $ 239.7240 |
| 90+ | $7.2826 | $ 655.4340 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12160T4 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 195mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Pd - Power Dissipation | 138W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 885pF | |
| Output Capacitance(Coss) | 38pF | |
| Gate Charge(Qg) | 43nC |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.5422 | $ 10.5422 |
| 10+ | $9.1533 | $ 91.5330 |
| 30+ | $7.9908 | $ 239.7240 |
| 90+ | $7.2826 | $ 655.4340 |
