| Manufacturer | |
| Mfr. Part # | IV1Q12160D7Z |
| EBEE Part # | E85806850 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.1522 | $ 10.1522 |
| 10+ | $8.7403 | $ 87.4030 |
| 30+ | $7.7583 | $ 232.7490 |
| 100+ | $7.0363 | $ 703.6300 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12160D7Z | |
| RoHS | ||
| Drain to Source Voltage | 1.2kV |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.1522 | $ 10.1522 |
| 10+ | $8.7403 | $ 87.4030 |
| 30+ | $7.7583 | $ 232.7490 |
| 100+ | $7.0363 | $ 703.6300 |
