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InventChip IV1Q12080T4Z
| Manufacturer | |
| Mfr. Part # | IV1Q12080T4Z |
| EBEE Part # | E85806849 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.4311 | $ 10.4311 |
| 10+ | $8.9330 | $ 89.3300 |
| 30+ | $8.0927 | $ 242.7810 |
| 90+ | $7.3881 | $ 664.9290 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12080T4Z | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 80mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Pd - Power Dissipation | 300W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 42A | |
| Ciss-Input Capacitance | 1.68nF | |
| Output Capacitance(Coss) | 69pF | |
| Gate Charge(Qg) | 76nC |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.4311 | $ 10.4311 |
| 10+ | $8.9330 | $ 89.3300 |
| 30+ | $8.0927 | $ 242.7810 |
| 90+ | $7.3881 | $ 664.9290 |
