| Manufacturer | |
| Mfr. Part # | IV1Q12080T3Z |
| EBEE Part # | E85806848 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.0557 | $ 11.0557 |
| 10+ | $10.5141 | $ 105.1410 |
| 30+ | $10.2757 | $ 308.2710 |
| 90+ | $10.0675 | $ 906.0750 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12080T3Z | |
| RoHS | ||
| Drain to Source Voltage | 1.2kV |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.0557 | $ 11.0557 |
| 10+ | $10.5141 | $ 105.1410 |
| 30+ | $10.2757 | $ 308.2710 |
| 90+ | $10.0675 | $ 906.0750 |
