| Manufacturer | |
| Mfr. Part # | IV1Q12050T4Z |
| EBEE Part # | E85806846 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.0009 | $ 17.0009 |
| 10+ | $15.6951 | $ 156.9510 |
| 30+ | $14.3907 | $ 431.7210 |
| 90+ | $13.2535 | $ 1192.8150 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12050T4Z | |
| RoHS | ||
| Drain to Source Voltage | 1.2kV |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.0009 | $ 17.0009 |
| 10+ | $15.6951 | $ 156.9510 |
| 30+ | $14.3907 | $ 431.7210 |
| 90+ | $13.2535 | $ 1192.8150 |
