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InventChip IV1Q12050T3


Manufacturer
Mfr. Part #
IV1Q12050T3
EBEE Part #
E82924637
Package
TO-247-3
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$17.0795$ 17.0795
10+$14.5823$ 145.8230
30+$13.3098$ 399.2940
90+$12.2008$ 1098.0720
TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetInventChip IV1Q12050T3
RoHS
TypeN-Channel
Pd - Power Dissipation327W
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)58A

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