| Manufacturer | |
| Mfr. Part # | IV1Q12050D7Z |
| EBEE Part # | E85806847 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.6810 | $ 13.6810 |
| 10+ | $13.2741 | $ 132.7410 |
| 30+ | $12.9483 | $ 388.4490 |
| 90+ | $12.6654 | $ 1139.8860 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q12050D7Z | |
| RoHS | ||
| Drain to Source Voltage | 1.2kV |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.6810 | $ 13.6810 |
| 10+ | $13.2741 | $ 132.7410 |
| 30+ | $12.9483 | $ 388.4490 |
| 90+ | $12.6654 | $ 1139.8860 |
