| Manufacturer | |
| Mfr. Part # | IV1Q06060T3G |
| EBEE Part # | E85806838 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.9598 | $ 11.9598 |
| 10+ | $10.2769 | $ 102.7690 |
| 30+ | $8.8867 | $ 266.6010 |
| 90+ | $8.0254 | $ 722.2860 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q06060T3G | |
| RoHS | ||
| Drain to Source Voltage | 650V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.9598 | $ 11.9598 |
| 10+ | $10.2769 | $ 102.7690 |
| 30+ | $8.8867 | $ 266.6010 |
| 90+ | $8.0254 | $ 722.2860 |
