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InventChip IV1Q06040T3
| Manufacturer | |
| Mfr. Part # | IV1Q06040T3 |
| EBEE Part # | E82979248 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>3 In Stock for Fast Shipping
3 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.8861 | $ 12.8861 |
| 10+ | $10.5696 | $ 105.6960 |
| 30+ | $9.6608 | $ 289.8240 |
| 90+ | $8.8682 | $ 798.1380 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1Q06040T3 | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 40mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10.8pF | |
| Pd - Power Dissipation | 348W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| Current - Continuous Drain(Id) | 72A | |
| Ciss-Input Capacitance | 2.692nF | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 110.8nC |
Shopping Guide
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3 Stock for Shipping Fast
3 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $12.8861 | $ 12.8861 |
| 10+ | $10.5696 | $ 105.6960 |
| 30+ | $9.6608 | $ 289.8240 |
| 90+ | $8.8682 | $ 798.1380 |
Best price for more quantity?
$
