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InventChip IV1B12013HA1L
| Manufacturer | |
| Mfr. Part # | IV1B12013HA1L |
| EBEE Part # | E85806854 |
| Package | Through Hole,62.8x33.8mm |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $151.0078 | $ 151.0078 |
| 30+ | $145.5011 | $ 4365.0330 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | InventChip IV1B12013HA1L | |
| RoHS | ||
| Drain to Source Voltage | 1.2kV |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $151.0078 | $ 151.0078 |
| 30+ | $145.5011 | $ 4365.0330 |
