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Infineon Technologies IMZ120R090M1H
| Manufacturer | |
| Mfr. Part # | IMZ120R090M1H |
| EBEE Part # | E8536293 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>61 In Stock for Fast Shipping
61 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.4537 | $ 9.4537 |
| 10+ | $9.0531 | $ 90.5310 |
| 30+ | $8.8073 | $ 264.2190 |
| 90+ | $8.6023 | $ 774.2070 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMZ120R090M1H | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 90mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Pd - Power Dissipation | 115W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 707pF | |
| Output Capacitance(Coss) | 39pF | |
| Gate Charge(Qg) | 21nC |
Shopping Guide
Expand
61 Stock for Shipping Fast
61 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.4537 | $ 9.4537 |
| 10+ | $9.0531 | $ 90.5310 |
| 30+ | $8.8073 | $ 264.2190 |
| 90+ | $8.6023 | $ 774.2070 |
Best price for more quantity?
$
