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Infineon Technologies IMZ120R060M1H


Manufacturer
Mfr. Part #
IMZ120R060M1HXKSA1
EBEE Part #
E8536292
Package
TO-247-4
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
This materials supports customized cables!
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2597 In Stock for Fast Shipping
2597 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$4.9838$ 4.9838
10+$4.2598$ 42.5980
30+$3.8296$ 114.8880
90+$3.3945$ 305.5050
510+$3.1945$ 1629.1950
990+$3.1040$ 3072.9600
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET)
DatasheetInfineon Technologies IMZ120R060M1HXKSA1
RoHS
TypeN-Channel
RDS(on)60mΩ
Operating Temperature --55℃~+175℃
Pd - Power Dissipation150W
Drain to Source Voltage1.2kV
Gate Threshold Voltage (Vgs(th))5.7V
Current - Continuous Drain(Id)36A
Ciss-Input Capacitance1.06nF
Output Capacitance(Coss)58pF
Gate Charge(Qg)31nC

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