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Infineon Technologies IMZ120R030M1HXKSA1
| Manufacturer | |
| Mfr. Part # | IMZ120R030M1HXKSA1 |
| EBEE Part # | E83289091 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4-1 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>48 In Stock for Fast Shipping
48 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.4510 | $ 13.4510 |
| 10+ | $11.7950 | $ 117.9500 |
| 30+ | $10.7852 | $ 323.5560 |
| 90+ | $9.9390 | $ 894.5100 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMZ120R030M1HXKSA1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 30mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Pd - Power Dissipation | 227W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 56A | |
| Ciss-Input Capacitance | 2.12nF | |
| Output Capacitance(Coss) | 116pF | |
| Gate Charge(Qg) | 63nC |
Shopping Guide
Expand
48 Stock for Shipping Fast
48 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.4510 | $ 13.4510 |
| 10+ | $11.7950 | $ 117.9500 |
| 30+ | $10.7852 | $ 323.5560 |
| 90+ | $9.9390 | $ 894.5100 |
Best price for more quantity?
$
