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Infineon Technologies IMW65R048M1H
| Manufacturer | |
| Mfr. Part # | IMW65R048M1H |
| EBEE Part # | E8536287 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>6 In Stock for Fast Shipping
6 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.2062 | $ 13.2062 |
| 10+ | $12.7822 | $ 127.8220 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMW65R048M1H | |
| RoHS | ||
| RDS(on) | 64mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 39A | |
| Ciss-Input Capacitance | 1.118nF | |
| Output Capacitance(Coss) | 168pF | |
| Gate Charge(Qg) | 33nC |
Shopping Guide
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6 Stock for Shipping Fast
6 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.2062 | $ 13.2062 |
| 10+ | $12.7822 | $ 127.8220 |
Best price for more quantity?
$
