Recommonended For You
Images are for reference only
Add to Favourites
Infineon Technologies IMW120R350M1HXKSA1
| Manufacturer | |
| Mfr. Part # | IMW120R350M1HXKSA1 |
| EBEE Part # | E82997926 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>3 In Stock for Fast Shipping
3 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.3651 | $ 5.3651 |
| 10+ | $4.5365 | $ 45.3650 |
| 30+ | $4.0455 | $ 121.3650 |
| 90+ | $3.5468 | $ 319.2120 |
| 510+ | $3.3176 | $ 1691.9760 |
| 990+ | $3.2138 | $ 3181.6620 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMW120R350M1HXKSA1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 350mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Ciss-Input Capacitance | 182pF | |
| Output Capacitance(Coss) | 10pF | |
| Gate Charge(Qg) | 5.3nC |
Shopping Guide
Expand
3 Stock for Shipping Fast
3 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.3651 | $ 5.3651 |
| 10+ | $4.5365 | $ 45.3650 |
| 30+ | $4.0455 | $ 121.3650 |
| 90+ | $3.5468 | $ 319.2120 |
| 510+ | $3.3176 | $ 1691.9760 |
| 990+ | $3.2138 | $ 3181.6620 |
Best price for more quantity?
$
