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Infineon Technologies IMW120R060M1H
| Manufacturer | |
| Mfr. Part # | IMW120R060M1H |
| EBEE Part # | E8536281 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>523 In Stock for Fast Shipping
523 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.3127 | $ 6.3127 |
| 10+ | $5.3803 | $ 53.8030 |
| 30+ | $4.8117 | $ 144.3510 |
| 90+ | $4.3345 | $ 390.1050 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMW120R060M1H | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 60mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 1.06nF | |
| Output Capacitance(Coss) | 58pF | |
| Gate Charge(Qg) | 31nC |
Shopping Guide
Expand
523 Stock for Shipping Fast
523 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.3127 | $ 6.3127 |
| 10+ | $5.3803 | $ 53.8030 |
| 30+ | $4.8117 | $ 144.3510 |
| 90+ | $4.3345 | $ 390.1050 |
Best price for more quantity?
$
