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Infineon Technologies IMBG65R048M1HXTMA1
| Manufacturer | |
| Mfr. Part # | IMBG65R048M1HXTMA1 |
| EBEE Part # | E83276336 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.0196 | $ 7.0196 |
| 10+ | $6.8368 | $ 68.3680 |
| 30+ | $6.7155 | $ 201.4650 |
| 100+ | $6.5942 | $ 659.4200 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMBG65R048M1HXTMA1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 64mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| Pd - Power Dissipation | 183W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 1.118nF | |
| Output Capacitance(Coss) | 168pF | |
| Gate Charge(Qg) | 33nC |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.0196 | $ 7.0196 |
| 10+ | $6.8368 | $ 68.3680 |
| 30+ | $6.7155 | $ 201.4650 |
| 100+ | $6.5942 | $ 659.4200 |
