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Infineon Technologies IMBG120R045M1HXTMA1
| Manufacturer | |
| Mfr. Part # | IMBG120R045M1HXTMA1 |
| EBEE Part # | E83279262 |
| Package | TO-263-7-12 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7-12 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>2 In Stock for Fast Shipping
2 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.2809 | $ 13.2809 |
| 10+ | $12.6657 | $ 126.6570 |
| 30+ | $11.6009 | $ 348.0270 |
| 100+ | $10.6711 | $ 1067.1100 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMBG120R045M1HXTMA1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 45mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7.3pF | |
| Pd - Power Dissipation | 227W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 47A | |
| Ciss-Input Capacitance | 1.527nF | |
| Output Capacitance(Coss) | 70pF | |
| Gate Charge(Qg) | 46nC |
Shopping Guide
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2 Stock for Shipping Fast
2 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.2809 | $ 13.2809 |
| 10+ | $12.6657 | $ 126.6570 |
| 30+ | $11.6009 | $ 348.0270 |
| 100+ | $10.6711 | $ 1067.1100 |
Best price for more quantity?
$
