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Infineon Technologies IMBF170R650M1XTMA1
| Manufacturer | |
| Mfr. Part # | IMBF170R650M1XTMA1 |
| EBEE Part # | E83289295 |
| Package | TO-263-7-13 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7-13 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>46 In Stock for Fast Shipping
46 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.0394 | $ 5.0394 |
| 10+ | $4.3265 | $ 43.2650 |
| 30+ | $3.9026 | $ 117.0780 |
| 100+ | $3.4739 | $ 347.3900 |
| 500+ | $3.2770 | $ 1638.5000 |
| 1000+ | $3.1865 | $ 3186.5000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies IMBF170R650M1XTMA1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 650mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| Pd - Power Dissipation | 88W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 7.4A | |
| Ciss-Input Capacitance | 422pF | |
| Output Capacitance(Coss) | 12pF | |
| Gate Charge(Qg) | 8nC |
Shopping Guide
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46 Stock for Shipping Fast
46 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.0394 | $ 5.0394 |
| 10+ | $4.3265 | $ 43.2650 |
| 30+ | $3.9026 | $ 117.0780 |
| 100+ | $3.4739 | $ 347.3900 |
| 500+ | $3.2770 | $ 1638.5000 |
| 1000+ | $3.1865 | $ 3186.5000 |
Best price for more quantity?
$
