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Infineon Technologies AIMW120R060M1HXKSA1
| Manufacturer | |
| Mfr. Part # | AIMW120R060M1HXKSA1 |
| EBEE Part # | E83278942 |
| Package | TO-247-3-41 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $21.8201 | $ 21.8201 |
| 10+ | $20.8394 | $ 208.3940 |
| 30+ | $19.1410 | $ 574.2300 |
| 100+ | $17.6584 | $ 1765.8400 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies AIMW120R060M1HXKSA1 | |
| RoHS | ||
| Type | N-Channel | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 36A |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $21.8201 | $ 21.8201 |
| 10+ | $20.8394 | $ 208.3940 |
| 30+ | $19.1410 | $ 574.2300 |
| 100+ | $17.6584 | $ 1765.8400 |
