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Infineon Technologies AIMW120R035M1HXKSA1
| Manufacturer | |
| Mfr. Part # | AIMW120R035M1HXKSA1 |
| EBEE Part # | E83289085 |
| Package | TO-247-3-41 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>5 In Stock for Fast Shipping
5 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $34.6586 | $ 34.6586 |
| 30+ | $32.8355 | $ 985.0650 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Infineon Technologies AIMW120R035M1HXKSA1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 35mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Pd - Power Dissipation | 228W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Current - Continuous Drain(Id) | 52A | |
| Ciss-Input Capacitance | 2.13nF | |
| Output Capacitance(Coss) | 107pF | |
| Gate Charge(Qg) | 59nC |
Shopping Guide
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5 Stock for Shipping Fast
5 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $34.6586 | $ 34.6586 |
| 30+ | $32.8355 | $ 985.0650 |
Best price for more quantity?
$
