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HXY MOSFET HC3M0045065D
| Manufacturer | |
| Mfr. Part # | HC3M0045065D |
| EBEE Part # | E822449546 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>55 In Stock for Fast Shipping
55 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.3723 | $ 9.3723 |
| 10+ | $8.0547 | $ 80.5470 |
| 30+ | $7.2514 | $ 217.5420 |
| 90+ | $6.5779 | $ 592.0110 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC3M0045065D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 33mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 49A |
Shopping Guide
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55 Stock for Shipping Fast
55 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.3723 | $ 9.3723 |
| 10+ | $8.0547 | $ 80.5470 |
| 30+ | $7.2514 | $ 217.5420 |
| 90+ | $6.5779 | $ 592.0110 |
Best price for more quantity?
$
