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HXY MOSFET HC3M0032120K
| Manufacturer | |
| Mfr. Part # | HC3M0032120K |
| EBEE Part # | E819723856 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>4 In Stock for Fast Shipping
4 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.2878 | $ 7.2878 |
| 10+ | $6.9435 | $ 69.4350 |
| 30+ | $6.3467 | $ 190.4010 |
| 90+ | $5.8259 | $ 524.3310 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC3M0032120K | |
| RoHS | ||
| RDS(on) | 43mΩ | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Pd - Power Dissipation | 283W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 63A | |
| Ciss-Input Capacitance | 3.357nF | |
| Output Capacitance(Coss) | 129pF | |
| Gate Charge(Qg) | 118nC |
Shopping Guide
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4 Stock for Shipping Fast
4 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.2878 | $ 7.2878 |
| 10+ | $6.9435 | $ 69.4350 |
| 30+ | $6.3467 | $ 190.4010 |
| 90+ | $5.8259 | $ 524.3310 |
Best price for more quantity?
$
