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HXY MOSFET HC3M0021120D
| Manufacturer | |
| Mfr. Part # | HC3M0021120D |
| EBEE Part # | E841428807 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>10 In Stock for Fast Shipping
10 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.0031 | $ 18.0031 |
| 10+ | $17.1521 | $ 171.5210 |
| 30+ | $15.6784 | $ 470.3520 |
| 90+ | $14.3916 | $ 1295.2440 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC3M0021120D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | - | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Pd - Power Dissipation | 469W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 81A | |
| Ciss-Input Capacitance | 4.818nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 160nC |
Shopping Guide
Expand
10 Stock for Shipping Fast
10 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.0031 | $ 18.0031 |
| 10+ | $17.1521 | $ 171.5210 |
| 30+ | $15.6784 | $ 470.3520 |
| 90+ | $14.3916 | $ 1295.2440 |
Best price for more quantity?
$
