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HXY MOSFET HC3M001K170J
| Manufacturer | |
| Mfr. Part # | HC3M001K170J |
| EBEE Part # | E822449551 |
| Package | TO-263-7L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>167 In Stock for Fast Shipping
167 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2447 | $ 4.2447 |
| 10+ | $3.6466 | $ 36.4660 |
| 50+ | $3.2234 | $ 161.1700 |
| 100+ | $2.8628 | $ 286.2800 |
| 500+ | $2.6966 | $ 1348.3000 |
| 1000+ | $2.6212 | $ 2621.2000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC3M001K170J | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 700mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| Pd - Power Dissipation | 86W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 6.7A | |
| Ciss-Input Capacitance | 285pF | |
| Output Capacitance(Coss) | 15.3pF | |
| Gate Charge(Qg) | 16.5nC |
Shopping Guide
Expand
167 Stock for Shipping Fast
167 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2447 | $ 4.2447 |
| 10+ | $3.6466 | $ 36.4660 |
| 50+ | $3.2234 | $ 161.1700 |
| 100+ | $2.8628 | $ 286.2800 |
| 500+ | $2.6966 | $ 1348.3000 |
| 1000+ | $2.6212 | $ 2621.2000 |
Best price for more quantity?
$
