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HXY MOSFET HC3M00160120D
| Manufacturer | |
| Mfr. Part # | HC3M00160120D |
| EBEE Part # | E822449549 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>4 In Stock for Fast Shipping
4 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.9658 | $ 4.9658 |
| 10+ | $4.2666 | $ 42.6660 |
| 30+ | $3.8412 | $ 115.2360 |
| 90+ | $3.4831 | $ 313.4790 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC3M00160120D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 160mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 17A |
Shopping Guide
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4 Stock for Shipping Fast
4 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.9658 | $ 4.9658 |
| 10+ | $4.2666 | $ 42.6660 |
| 30+ | $3.8412 | $ 115.2360 |
| 90+ | $3.4831 | $ 313.4790 |
Best price for more quantity?
$
