35% off
Recommonended For You
Images are for reference only
Add to Favourites
HXY MOSFET HC3M0015065D
| Manufacturer | |
| Mfr. Part # | HC3M0015065D |
| EBEE Part # | E819723863 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>139 In Stock for Fast Shipping
139 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.0383 | $ 11.0383 |
| 10+ | $10.5120 | $ 105.1200 |
| 30+ | $9.5997 | $ 287.9910 |
| 90+ | $8.8040 | $ 792.3600 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC3M0015065D | |
| RoHS | ||
| RDS(on) | 21mΩ | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| Pd - Power Dissipation | 416W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 501pF | |
| Output Capacitance(Coss) | 289pF | |
| Gate Charge(Qg) | 188nC |
Shopping Guide
Expand
139 Stock for Shipping Fast
139 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.0383 | $ 11.0383 |
| 10+ | $10.5120 | $ 105.1200 |
| 30+ | $9.5997 | $ 287.9910 |
| 90+ | $8.8040 | $ 792.3600 |
Best price for more quantity?
$
