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HXY MOSFET HC2M1000170D
| Manufacturer | |
| Mfr. Part # | HC2M1000170D |
| EBEE Part # | E819723852 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>107 In Stock for Fast Shipping
107 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3876 | $ 2.3876 |
| 10+ | $2.0399 | $ 20.3990 |
| 30+ | $1.7874 | $ 53.6220 |
| 90+ | $1.5647 | $ 140.8230 |
| 510+ | $1.4635 | $ 746.3850 |
| 990+ | $1.4195 | $ 1405.3050 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC2M1000170D | |
| RoHS | ||
| RDS(on) | 1.4Ω | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| Pd - Power Dissipation | 69W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 215pF | |
| Output Capacitance(Coss) | 19pF | |
| Gate Charge(Qg) | 22nC |
Shopping Guide
Expand
107 Stock for Shipping Fast
107 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3876 | $ 2.3876 |
| 10+ | $2.0399 | $ 20.3990 |
| 30+ | $1.7874 | $ 53.6220 |
| 90+ | $1.5647 | $ 140.8230 |
| 510+ | $1.4635 | $ 746.3850 |
| 990+ | $1.4195 | $ 1405.3050 |
Best price for more quantity?
$
