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HXY MOSFET HC2M0080120K
| Manufacturer | |
| Mfr. Part # | HC2M0080120K |
| EBEE Part # | E819723862 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>60 In Stock for Fast Shipping
60 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8081 | $ 3.8081 |
| 10+ | $3.2555 | $ 32.5550 |
| 30+ | $2.9280 | $ 87.8400 |
| 90+ | $2.5957 | $ 233.6130 |
| 510+ | $2.4425 | $ 1245.6750 |
| 990+ | $2.3730 | $ 2349.2700 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC2M0080120K | |
| RoHS | ||
| RDS(on) | 98mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 1.475nF | |
| Output Capacitance(Coss) | 94pF | |
| Gate Charge(Qg) | 79nC |
Shopping Guide
Expand
60 Stock for Shipping Fast
60 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8081 | $ 3.8081 |
| 10+ | $3.2555 | $ 32.5550 |
| 30+ | $2.9280 | $ 87.8400 |
| 90+ | $2.5957 | $ 233.6130 |
| 510+ | $2.4425 | $ 1245.6750 |
| 990+ | $2.3730 | $ 2349.2700 |
Best price for more quantity?
$
