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HXY MOSFET HC2M0080120D
| Manufacturer | |
| Mfr. Part # | HC2M0080120D |
| EBEE Part # | E819723850 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>35 In Stock for Fast Shipping
35 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9354 | $ 3.9354 |
| 10+ | $3.3640 | $ 33.6400 |
| 30+ | $3.0250 | $ 90.7500 |
| 90+ | $2.6817 | $ 241.3530 |
| 510+ | $2.5235 | $ 1286.9850 |
| 990+ | $2.4525 | $ 2427.9750 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC2M0080120D | |
| RoHS | ||
| RDS(on) | 98mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 1.13nF | |
| Output Capacitance(Coss) | 92pF | |
| Gate Charge(Qg) | 71nC |
Shopping Guide
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35 Stock for Shipping Fast
35 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9354 | $ 3.9354 |
| 10+ | $3.3640 | $ 33.6400 |
| 30+ | $3.0250 | $ 90.7500 |
| 90+ | $2.6817 | $ 241.3530 |
| 510+ | $2.5235 | $ 1286.9850 |
| 990+ | $2.4525 | $ 2427.9750 |
Best price for more quantity?
$
